Invention Grant
US09198294B2 Electronic device for radiofrequency or power applications and process for manufacturing such a device 有权
用于射频或电力应用的电子设备以及用于制造这种设备的过程

Electronic device for radiofrequency or power applications and process for manufacturing such a device
Abstract:
The invention relates to an electronic device for radiofrequency or power applications, comprising a semiconductor layer supporting electronic components on a support substrate, wherein the support substrate comprises a base layer having a thermal conductivity of at least 30 W/mK and a superficial layer having a thickness of at least 5 μm, the superficial layer having an electrical resistivity of at least 3000 Ohm·cm and a thermal conductivity of at least 30 W/mK. The invention also relates to two processes for manufacturing such a device.
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