Invention Grant
US09199836B2 Method of manufacturing a semiconductor integrated circuit device having a MEMS element
有权
制造具有MEMS元件的半导体集成电路器件的方法
- Patent Title: Method of manufacturing a semiconductor integrated circuit device having a MEMS element
- Patent Title (中): 制造具有MEMS元件的半导体集成电路器件的方法
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Application No.: US14452756Application Date: 2014-08-06
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Publication No.: US09199836B2Publication Date: 2015-12-01
- Inventor: Koichi Arai
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Womble Carlyle Sandridge & Rice PLLC
- Priority: JP2012-016091 20120130
- Main IPC: H01L29/84
- IPC: H01L29/84 ; G01L9/00 ; B81B3/00 ; G01P15/08 ; B81C3/00 ; B81C1/00 ; G01L19/06
Abstract:
In a method of manufacturing a semiconductor integrated circuit device having an MEMS element over a single semiconductor chip, the movable part of the MEMS element is fixed before the formation of a rewiring. After formation of the rewiring, the wafer is diced. Then, the movable part of the MEMS element is released by etching the wafer.
Public/Granted literature
- US20140339659A1 Method of Manufacturing A Semiconductor Integrated Circuit Device Having A MEMS Element Public/Granted day:2014-11-20
Information query
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