Invention Grant
- Patent Title: Arc evaporation source and film forming method using the same
- Patent Title (中): 电弧蒸发源和成膜方法使用相同
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Application No.: US13263946Application Date: 2010-04-14
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Publication No.: US09200360B2Publication Date: 2015-12-01
- Inventor: Shinichi Tanifuji , Kenji Yamamoto , Hirofumi Fujii , Yoshinori Kurokawa
- Applicant: Shinichi Tanifuji , Kenji Yamamoto , Hirofumi Fujii , Yoshinori Kurokawa
- Applicant Address: JP Kobe-shi
- Assignee: Kobe Steel, Ltd.
- Current Assignee: Kobe Steel, Ltd.
- Current Assignee Address: JP Kobe-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-109305 20090428; JP2010-024315 20100205
- International Application: PCT/JP2010/002712 WO 20100414
- International Announcement: WO2010/125756 WO 20101104
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C14/32 ; C23C14/54 ; H01J37/32

Abstract:
Provided is an arc evaporation source wherein film-forming speed is increased by inducing magnetic lines in the substrate direction. The arc evaporation source is provided with: at least one outer circumferential magnet (3), which is disposed such that the outer circumferential magnet surrounds the outer circumference of a target (2) and that the magnetization direction thereof is in the direction orthogonally intersecting the surface of the target (2); and a rear surface magnet (4) disposed on the rear surface side of the target (2). The rear surface magnet (4) has a non-ring-shaped first permanent magnet (4A) wherein the polarity thereof faces the same direction as the polarity of the outer circumferential magnet (3) and the magnetization direction of the rear surface magnet (4) is in the direction orthogonally intersecting the surface of the target (2).
Public/Granted literature
- US20120037493A1 ARC EVAPORATION SOURCE AND FILM FORMING METHOD USING THE SAME Public/Granted day:2012-02-16
Information query
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