Invention Grant
- Patent Title: Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device
- Patent Title (中): 横电场型液晶显示装置及其制造方法以及扫描曝光装置
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Application No.: US13956190Application Date: 2013-07-31
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Publication No.: US09201309B2Publication Date: 2015-12-01
- Inventor: Naoto Hirota
- Applicant: Naoto Hirota
- Applicant Address: JP Aichi
- Assignee: Obayashiseikou Co., Ltd.
- Current Assignee: Obayashiseikou Co., Ltd.
- Current Assignee Address: JP Aichi
- Agency: Muramatsu & Associates
- Priority: JP2002-237219 20020701
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G02F1/1343 ; G02F1/1362 ; G03F1/00 ; G03B27/10 ; G02F1/1368

Abstract:
A process of manufacturing a liquid crystal display device of transverse electric-field type, wherein a halftone photomask which is used to form a photoresist pattern has a fully light-shielding area preventing UV irradiation of a portion of an active matrix substrate in which a thin-film transistor element is to be formed, so that the photoresist pattern includes a positive resist portion which has a first thickness and which is formed on the above-indicated portion of the substrate. The halftone mask further has a fully light-transmitting area which permits fully UV transmission therethrough to provide the photoresist pattern with a resist-free area which corresponds to a portion of the substrate in which a contact hole serving as a third connection portion connecting an external scanning-line driver circuit and a scanning-line terminal portion through a junction electrode is to be formed. The photoresist pattern also has a positive resist portion which is formed in the other portion of the substrate and which has a second thickness smaller than the first thickness. Also disclosed in a scan-exposing device used in the process is also disclosed.
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