Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13751326Application Date: 2013-01-28
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Publication No.: US09201439B2Publication Date: 2015-12-01
- Inventor: Masao Yamashiro , Tatsuya Bando , Kunitoshi Kamada , Hiroshi Sato
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-056077 20120313
- Main IPC: H02M3/07
- IPC: H02M3/07 ; G05F1/625

Abstract:
A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.
Public/Granted literature
- US20130241515A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-09-19
Information query
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