Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US14310731Application Date: 2014-06-20
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Publication No.: US09201440B2Publication Date: 2015-12-01
- Inventor: Hideki Makiyama , Toshiaki Iwamatsu
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-130446 20130621; JP2013-230392 20131106
- Main IPC: G05F1/625
- IPC: G05F1/625

Abstract:
A semiconductor integrated circuit device has, as a current monitor circuit, a circuit in which n-channel type MISFETs are connected in series with each other. Based on a delay time of a speed monitor circuit in a state where a substrate bias is being applied to the p-channel type MISFETs, a first voltage value of a first substrate bias to be applied to the p-channel type MISFETs is determined. Next, based on a current flowing through an n-channel type MISFET in a state where the first substrate bias is being applied to the p-channel type MISFETs of the current monitor circuit and a second substrate bias is being applied to the n-channel type MISFETs of the current monitor circuit, a second voltage value of the second substrate bias to be applied to the n-channel type MISFETs is determined.
Public/Granted literature
- US20140375379A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2014-12-25
Information query
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