Invention Grant
US09201834B2 Reconfigurable high speed memory chip module and electronic device with a reconfigurable high speed memory chip module
有权
可重构高速存储器芯片模块和具有可重构高速存储器芯片模块的电子设备
- Patent Title: Reconfigurable high speed memory chip module and electronic device with a reconfigurable high speed memory chip module
- Patent Title (中): 可重构高速存储器芯片模块和具有可重构高速存储器芯片模块的电子设备
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Application No.: US13666993Application Date: 2012-11-02
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Publication No.: US09201834B2Publication Date: 2015-12-01
- Inventor: Weng-Dah Ken , Chao-Chun Lu , Jan-Mye Sung
- Applicant: Etron Technology, Inc.
- Applicant Address: TW Hsinchu
- Assignee: Etron Technology, Inc.
- Current Assignee: Etron Technology, Inc.
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu; Scott Margo
- Main IPC: G06F13/40
- IPC: G06F13/40 ; G06F13/42

Abstract:
A reconfigurable high speed memory chip module includes a type of memory cell array group, a first transmission bus, and a logic unit. The type memory cell array group includes multiple memory cell array integrated circuits (ICs). The first transmission bus coupled to the type memory cell array group has a first programmable transmitting or receiving data rate, a first programmable transmitting or receiving signal swing, a first programmable bus width, and a combination thereof. The logic unit is coupled to the first transmission bus for accessing the type memory cell array group through the first transmission bus.
Public/Granted literature
- US20130091312A1 RECONFIGURABLE HIGH SPEED MEMORY CHIP MODULE AND ELECTRONICS SYSTEM DEVICE Public/Granted day:2013-04-11
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