Invention Grant
US09202532B2 Burst sequence control and multi-valued fuse scheme in memory device 有权
存储器件中的脉冲序列控制和多值保险丝方案

Burst sequence control and multi-valued fuse scheme in memory device
Abstract:
A decoder circuit, responsive to a burst sequence control signal, for accessing a memory location in a memory array. The decoder circuit receives an address signal and outputs a plurality of first select lines. Logic circuitry receives these first select lines and a burst sequence control signal and outputs a plurality of second select lines. When the bust sequence control signal is unasserted, the logic circuitry passes through to the plurality of second select lines the signals received on the plurality of first select lines. When the burst sequence control signal is asserted, the logic circuitry performs a logical operation on the signals received on the plurality of first select lines and outputs the result on the plurality of second select lines.
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