Invention Grant
US09202532B2 Burst sequence control and multi-valued fuse scheme in memory device
有权
存储器件中的脉冲序列控制和多值保险丝方案
- Patent Title: Burst sequence control and multi-valued fuse scheme in memory device
- Patent Title (中): 存储器件中的脉冲序列控制和多值保险丝方案
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Application No.: US13615063Application Date: 2012-09-13
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Publication No.: US09202532B2Publication Date: 2015-12-01
- Inventor: Myung Chan Choi
- Applicant: Myung Chan Choi
- Applicant Address: TW Taichung
- Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee Address: TW Taichung
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C8/12 ; G11C16/08

Abstract:
A decoder circuit, responsive to a burst sequence control signal, for accessing a memory location in a memory array. The decoder circuit receives an address signal and outputs a plurality of first select lines. Logic circuitry receives these first select lines and a burst sequence control signal and outputs a plurality of second select lines. When the bust sequence control signal is unasserted, the logic circuitry passes through to the plurality of second select lines the signals received on the plurality of first select lines. When the burst sequence control signal is asserted, the logic circuitry performs a logical operation on the signals received on the plurality of first select lines and outputs the result on the plurality of second select lines.
Public/Granted literature
- US20140071770A1 Burst Sequence Control And Multi-Valued Fuse Scheme In Memory Device Public/Granted day:2014-03-13
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