Invention Grant
US09202534B2 Semiconductor memory device performing pre-read and main read, memory system including the same and method of operating the same
有权
执行预读和主读取的半导体存储器件，包括其的存储器系统及其操作方法
- Patent Title: Semiconductor memory device performing pre-read and main read, memory system including the same and method of operating the same
- Patent Title (中): 执行预读和主读取的半导体存储器件，包括其的存储器系统及其操作方法
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Application No.: US13803493Application Date: 2013-03-14
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Publication No.: US09202534B2Publication Date: 2015-12-01
- Inventor: Chi Wook An
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0131766 20121120
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10 ; G11C11/56 ; G11C16/04 ; G11C16/06 ; G11C7/22
Abstract:
A method of operating a semiconductor memory device includes performing a pre-read and a first main read to selected memory cells in response to a read request, and performing a second main read to the selected memory cells in response to a re-read request.
Public/Granted literature
- US20140140148A1 SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND METHOD OF OPERATING THE SAME Public/Granted day:2014-05-22
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