Invention Grant
- Patent Title: Three dimensional memory control circuitry
- Patent Title (中): 三维存储器控制电路
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Application No.: US13995044Application Date: 2012-03-26
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Publication No.: US09202536B2Publication Date: 2015-12-01
- Inventor: Mark Helm , Jung Sheng Hoei , Aaron Yip , Dzung Nguyen
- Applicant: Mark Helm , Jung Sheng Hoei , Aaron Yip , Dzung Nguyen
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alpine Technology Law Group LLC
- International Application: PCT/US2012/030632 WO 20120326
- International Announcement: WO2013/147743 WO 20131003
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C7/12 ; G11C7/18 ; G11C8/14 ; H01L27/02 ; H01L27/06 ; H01L27/105 ; H01L27/115 ; G11C5/02 ; G11C5/12 ; G11C13/00 ; G11C16/24

Abstract:
An integrated circuit includes a memory array, a wordline circuit, divided into at least two subcircuits, to control the memory array, and a bitline circuit, divided into at least two subcircuits, to control the memory array. The wordline subcircuits and the bitline subcircuits at least partially overlap separate respective regions of the memory array.
Public/Granted literature
- US20140146612A1 THREE DIMENSIONAL MEMORY CONTROL CIRCUITRY Public/Granted day:2014-05-29
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