Invention Grant
- Patent Title: MEMS device and manufacturing method thereof
- Patent Title (中): MEMS器件及其制造方法
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Application No.: US13962909Application Date: 2013-08-08
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Publication No.: US09202654B2Publication Date: 2015-12-01
- Inventor: Yoshiaki Shimooka
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick PC
- Priority: JP2013-076323 20130401
- Main IPC: H01H59/00
- IPC: H01H59/00 ; H01H1/00 ; H01G5/16 ; H01G5/014

Abstract:
According to one embodiment, a MEMS device includes a first electrode formed on a support substrate, a second electrode arranged to face the first electrode and formed to be movable in a facing direction with respect to the first electrode, a beam portion formed on the support substrate and formed to support the second electrode, a cap layer formed to cover the second electrode and beam portion, a plurality of through-holes formed in the cap layer, the through-holes being formed in a portion other than a proximity portion in which a facing distance between the cap layer and a member in the cap layer is not longer than a preset distance, and a sealing layer formed to cover the cap layer and fill the through-holes.
Public/Granted literature
- US20140291136A1 MEMS DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-10-02
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