Invention Grant
US09202671B2 Charged particle beam apparatus and sample processing method using charged particle beam apparatus
有权
带电粒子束装置和采用带电粒子束装置的样品处理方法
- Patent Title: Charged particle beam apparatus and sample processing method using charged particle beam apparatus
- Patent Title (中): 带电粒子束装置和采用带电粒子束装置的样品处理方法
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Application No.: US14220981Application Date: 2014-03-20
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Publication No.: US09202671B2Publication Date: 2015-12-01
- Inventor: Xin Man , Atsushi Uemoto , Tatsuya Asahata
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2013-067319 20130327
- Main IPC: H01J37/252
- IPC: H01J37/252 ; H01J37/26 ; H01J37/30

Abstract:
A charged particle beam apparatus includes a sample stage, a focused ion beam column, a scattered electron detector that detects backscattered electrons generated from a cross-section of a sample, a crystal orientation information generation unit that generates crystal orientation information on a predetermined region of the cross-section, and an angle calculation unit that calculates attachment angles of the sample stage, corresponding to a direction of the cross-section. In response to receiving input of information indicating that the crystal orientation information on the region displayed on a display unit is changed to aimed second crystal orientation information, the angle calculation unit calculates the attachment angles corresponding to the direction of the cross-section for generating the second crystal orientation information, and the focused ion beam column performs etching processing on the cross-section at the calculated attachment angles.
Public/Granted literature
- US20140291511A1 CHARGED PARTICLE BEAM APPARATUS AND SAMPLE PROCESSING METHOD USING CHARGED PARTICLE BEAM APPARATUS Public/Granted day:2014-10-02
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