A method of forming an ultra-shallow junction in a semiconductor substrate. The method includes forming an amorphous region in a semiconductor substrate by performing a pre-amorphization implant step and implanting one or more dopants in the amorphous region by performing a monolayer doping step. The semiconductor substrate is then thermally treated to activate the implanted dopant in the amorphous region to thereby form an ultra-shallow junction in the semiconductor substrate. The thermal treatment can be performed without any oxide cap overlying the implanted amorphous region.