Invention Grant
US09202745B2 Directional SiO2 etch using low-temperature etchant deposition and plasma post-treatment
有权
使用低温蚀刻剂沉积和等离子体后处理的方向SiO 2蚀刻
- Patent Title: Directional SiO2 etch using low-temperature etchant deposition and plasma post-treatment
- Patent Title (中): 使用低温蚀刻剂沉积和等离子体后处理的方向SiO 2蚀刻
-
Application No.: US14466821Application Date: 2014-08-22
-
Publication No.: US09202745B2Publication Date: 2015-12-01
- Inventor: David T. Or , Joshua Collins , Mei Chang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L21/3065
Abstract:
Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH4F), and annealing the substrate to a first temperature to sublimate one or more volatile byproducts.
Public/Granted literature
- US20140363979A1 DIRECTIONAL SIO2 ETCH USING LOW-TEMPERATURE ETCHANT DEPOSITION AND PLASMA POST-TREATMENT Public/Granted day:2014-12-11
Information query
IPC分类:
