Invention Grant
- Patent Title: Semiconductor devices and methods of producing these
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13754382Application Date: 2013-01-30
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Publication No.: US09202753B2Publication Date: 2015-12-01
- Inventor: Johann Kosub , Michael Ledutke
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/78 ; H01L21/02 ; H01L23/32 ; H01L23/498 ; H01L23/00 ; H01L21/683 ; H01L23/538 ; H01L23/31 ; H01L21/56
Abstract:
A method includes applying a reinforcing wafer to a semiconductor wafer, thereby forming a composite wafer. Further the method includes dividing the composite wafer, thereby generating a plurality of composite chips each including a semiconductor chip and a reinforcing chip.
Public/Granted literature
- US20140210054A1 Semiconductor Devices and Methods of Producing These Public/Granted day:2014-07-31
Information query
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