Invention Grant
US09202775B2 Semiconductor devices having bit line structures disposed in trenches
有权
具有布置在沟槽中的位线结构的半导体器件
- Patent Title: Semiconductor devices having bit line structures disposed in trenches
- Patent Title (中): 具有布置在沟槽中的位线结构的半导体器件
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Application No.: US14178127Application Date: 2014-02-11
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Publication No.: US09202775B2Publication Date: 2015-12-01
- Inventor: Jin Ki Jung , Myoung Soo Kim
- Applicant: SK HYNIX INC.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2013-0089154 20130726
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
Semiconductor devices are provided. The semiconductor device includes a bit line contact plug and a storage node contact plug electrically connected to an active region of a substrate. A bit line structure is disposed on the bit line contact plug to extend in a first direction. The bit line structure is disposed in a trench pattern that intrudes into a side of the storage node contact plug. Related methods and systems are also provided.
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