Invention Grant
US09202803B2 Laser cavity formation for embedded dies or components in substrate build-up layers
有权
激光腔形成用于嵌入式裸片或元件在衬底堆积层中
- Patent Title: Laser cavity formation for embedded dies or components in substrate build-up layers
- Patent Title (中): 激光腔形成用于嵌入式裸片或元件在衬底堆积层中
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Application No.: US14229734Application Date: 2014-03-28
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Publication No.: US09202803B2Publication Date: 2015-12-01
- Inventor: Chong Zhang , Stefanie M. Lotz , Qinglei Zhang , Sri Ranga Boyapati , Nikhil Sharma , Islam A. Salama
- Applicant: Chong Zhang , Stefanie M. Lotz , Qinglei Zhang , Sri Ranga Boyapati , Nikhil Sharma , Islam A. Salama
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L23/24
- IPC: H01L23/24 ; H01L25/065

Abstract:
An apparatus including a package substrate including a plurality of layers of conductive material, the package substrate including a cavity; and a device in the cavity, wherein an ultimate layer of the plurality of layers of conductive material defines contacts to contact points of the device. An apparatus including a package substrate comprising a plurality of conductive layers and a silicon bridge die disposed between ones of the plurality of conductive layers and an ultimate layer of the plurality of conductive layers defines contact points to contact points of the silicon bridge die; and a logic die coupled to the contact points of the ultimate layer of the plurality of layers of conductive layers.
Public/Granted literature
- US20150279817A1 LASER CAVITY FORMATION FOR EMBEDDED DIES OR COMPONENTS IN SUBSTRATE BUILD-UP LAYERS Public/Granted day:2015-10-01
Information query
IPC分类: