Invention Grant
- Patent Title: Three-dimensional semiconductor memory devices and methods of fabricating the same
- Patent Title (中): 三维半导体存储器件及其制造方法
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Application No.: US14493849Application Date: 2014-09-23
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Publication No.: US09202819B2Publication Date: 2015-12-01
- Inventor: Juyul Lee , Bumsu Kim , Kwangmin Park , Hyun Park , Jae-young Ahn , Dongchul Yoo , Jongsik Chun , Kihyun Hwang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0039151 20120416
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L27/115 ; H01L29/792
Abstract:
A three-dimensional (3D) semiconductor memory device includes an electrode separation pattern, a stack structure, a data storage layer, and a channel structure. The electrode separation pattern is disposed on a substrate. A stack structure is disposed on a sidewall of the electrode separation pattern. The stack structure includes a corrugated sidewall opposite to the sidewall of the electrode separation pattern. The sidewall of the electrode separation pattern is vertical to the substrate. A data storage layer is disposed on the corrugated sidewall. A channel structure is disposed on the charge storage layer.
Public/Granted literature
- US20150041882A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2015-02-12
Information query
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