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US09202844B2 Semiconductor devices having blocking layers and methods of forming the same 有权
具有阻挡层的半导体器件及其形成方法

Semiconductor devices having blocking layers and methods of forming the same
Abstract:
A semiconductor device includes a lower interconnection having second conductivity-type impurities on a substrate having first conductivity-type impurities. A switching device is on the lower interconnection. A first blocking layer is provided between the lower interconnection and the switching device. The first blocking layer includes carbon (C), germanium (Ge), or a combination thereof. A second blocking layer may be provided between the substrate and the lower interconnection.
Abstract(Chinese):

半导体器件包括在具有第一导电型杂质的衬底上的具有第二导电类型杂质的下互连。 开关装置在较低的互连上。 第一阻挡层设置在下互连和开关器件之间。 第一阻挡层包括碳（C），锗（Ge）或其组合。 第二阻挡层可以设置在基板和下部互连件之间。

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