Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13761498Application Date: 2013-02-07
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Publication No.: US09202877B2Publication Date: 2015-12-01
- Inventor: Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-100197 20100423
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/26 ; H01L21/383 ; H01L21/477 ; H01L29/49 ; H01L29/786 ; H01L29/78 ; H01L29/66 ; H01L27/12
Abstract:
One object of one embodiment of the present invention is to provide a highly reliable semiconductor device including an oxide semiconductor, which has stable electrical characteristics. In a method for manufacturing a semiconductor device, a first insulating film is formed; source and drain electrodes and an oxide semiconductor film electrically connected to the source and drain electrodes are formed over the first insulating film; heat treatment is performed on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed; oxygen doping treatment is performed on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film; a second insulating film is formed over the oxide semiconductor film; and a gate electrode is formed over the second insulating film so as to overlap with the oxide semiconductor film.
Public/Granted literature
- US20130146870A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-06-13
Information query
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