Invention Grant
US09202899B2 Voltage switchable non-local spin-FET and methods for making same
有权
电压开关非局部自旋FET及其制造方法
- Patent Title: Voltage switchable non-local spin-FET and methods for making same
- Patent Title (中): 电压开关非局部自旋FET及其制造方法
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Application No.: US14667806Application Date: 2015-03-25
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Publication No.: US09202899B2Publication Date: 2015-12-01
- Inventor: Jeffry Kelber
- Applicant: QUANTUM DEVICES, LLC
- Applicant Address: US MD Rockville
- Assignee: Quantum Devices, LLC
- Current Assignee: Quantum Devices, LLC
- Current Assignee Address: US MD Rockville
- Agency: Law Offices of Marc Labgold, P.C.
- Agent Steven B. Kelber
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L29/82 ; H01L29/267 ; H01L23/532 ; H01L23/528

Abstract:
A voltage switchable non-local spin-FET is disclosed which provides a layer of chromia over a ferromagnetic substrate, such as cobalt. A film of graphene overlays the chromia, with a protective layer of metal oxide like cobalt oxide or iron oxide there between to prevent catalytic degradation of the graphene, which may occur. The graphene is provided with a contact, or source and drain, depending on the application. The spin-FET, which exhibits magnetic remanence, may be provided with a top gate of, e.g., cobalt or other ferromagnet such as iron. As an alternative to the ferromagnetic substrate, the device may be formed on a silicon or gallium arsenide base, or directly on a metal interconnect of an integrated circuit.
Public/Granted literature
- US20150200283A1 VOLTAGE SWITCHABLE NON-LOCAL SPIN-FET AND METHODS FOR MAKING SAME Public/Granted day:2015-07-16
Information query
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