A semiconductor device includes a fin-shaped silicon layer and a pillar-shaped silicon layer on the fin-shaped silicon layer, where a width of a bottom part of the pillar-shaped silicon layer is equal to a width of a top part of the fin-shaped silicon layer. A gate insulating film and a metal gate electrode are around the pillar-shaped silicon layer and a metal gate line extends in a direction perpendicular to the fin-shaped silicon layer and is connected to the metal gate electrode. A nitride film is on an entire top surface of the metal gate electrode and the metal gate line, except for the bottom of a contact.