Invention Grant
- Patent Title: Fluorescent material of light-emitting diode and method for preparing the same
- Patent Title (中): 发光二极管的荧光材料及其制备方法
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Application No.: US13929819Application Date: 2013-06-28
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Publication No.: US09202991B2Publication Date: 2015-12-01
- Inventor: Chung-Hsin Lu
- Applicant: NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Taipei
- Assignee: NATIONAL TAIWAN UNIVERSITY
- Current Assignee: NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Taipei
- Agency: CKC & Partners Co., Ltd.
- Priority: TW101123446A 20120629
- Main IPC: H01L33/50
- IPC: H01L33/50 ; C09K11/02 ; C09K11/08 ; C09K11/58 ; C09K11/62 ; C09K11/74 ; C09K11/75 ; C09K11/77
Abstract:
The present invention relates to an inorganic nitride-based fluorescent material, comprising an inorganic fluorescent host material represented by the following formula (I): (M)xSiyNz:At (I) wherein, M is at least one metal selected from the group consisting of metals of IIA and IIIA, and x is from 1.0 to 3.0, and y is from 0.7 to 6.0, and z is from 1.0 to 9.0 and At is an activator; and a surface coating material is at least one metal oxide, metal hydroxide or metal carbonate, and the metal of the metal oxide, the metal hydroxide or the metal carbonate is selected from the group consisting of Mg, Ca, Sr, Ba, V, Cr, Mn, Fe, Co, Ni, Cu, La, Ga, In, Sn, Sb and Bi.
Public/Granted literature
- US20140001404A1 FLUORESCENT MATERIAL OF LIGHT-EMITTING DIODE AND METHOD FOR PREPARING THE SAME Public/Granted day:2014-01-02
Information query
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