Invention Grant
- Patent Title: Semiconductor light emitting element and method for manufacturing the same
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US14176272Application Date: 2014-02-10
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Publication No.: US09202994B2Publication Date: 2015-12-01
- Inventor: Rei Hashimoto , Shigeya Kimura , Jongil Hwang , Hiroshi Katsuno , Shinji Saito , Shinya Nunoue
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-046009 20130307
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/32 ; H01L33/50 ; H01L33/60 ; H01L25/075 ; H01L33/00 ; H01L33/40

Abstract:
According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.
Public/Granted literature
- US20140252382A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-09-11
Information query
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