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US09203014B2 Magnetic memory devices having junction magnetic layers and buffer layers and related methods 有权
具有结磁层和缓冲层的磁存储器件及相关方法

Magnetic memory devices having junction magnetic layers and buffer layers and related methods
Abstract:
A magnetic memory device may include a free magnetic structure, a tunnel barrier layer, and a pinned magnetic structure wherein the tunnel barrier layer is between the free magnetic structure and the pinned magnetic structure. The pinned magnetic structure may include first and second pinned layers and an exchange coupling layer between the first and second pinned layers. The second pinned layer may be between the first pinned layer and the tunnel barrier layer, and the second pinned layer may include a junction magnetic layer and a buffer layer between the junction magnetic layer and the exchange coupling layer. The buffer layer may include a layer of a material including a non-magnetic metallic element. Related devices, structures, and methods are also discussed.
Abstract(Chinese):

磁存储器件可以包括自由磁结构，隧道势垒层和钉扎磁结构，其中隧道势垒层位于自由磁结构和钉扎磁结构之间。 被钉扎的磁性结构可以包括第一和第二被钉扎层以及在第一和第二钉扎层之间的交换耦合层。 第二被钉扎层可以在第一被钉扎层和隧道势垒层之间，并且第二钉扎层可以在结磁性层和交换耦合层之间包括结磁性层和缓冲层。 缓冲层可以包括包括非磁性金属元素的材料层。 还讨论了相关设备，结构和方法。

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