Invention Grant
- Patent Title: Light-emitting body, light-emitting layer, and light-emitting device
- Patent Title (中): 发光体,发光层和发光装置
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Application No.: US13370672Application Date: 2012-02-10
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Publication No.: US09203044B2Publication Date: 2015-12-01
- Inventor: Shunpei Yamazaki , Satoshi Seo , Nobuharu Ohsawa , Satoko Shitagaki , Hideko Inoue , Hiroshi Kadoma , Harue Osaka , Kunihiko Suzuki
- Applicant: Shunpei Yamazaki , Satoshi Seo , Nobuharu Ohsawa , Satoko Shitagaki , Hideko Inoue , Hiroshi Kadoma , Harue Osaka , Kunihiko Suzuki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-031013 20110216
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/00 ; H01L51/50

Abstract:
An organic light-emitting element having high efficiency and long lifetime is provided. An organic light-emitting body is provided which includes a host having a high electron-transport property (n-type host), a host having a high hole-transport property (p-type host), and a guest such as an iridium complex and in which the n-type host and the p-type host are located so as to be adjacent to each other. When an electron and a hole are injected to such a light-emitting body, the electron is trapped by the n-type host and the hole is trapped by the p-type host. Then, both the electron and the hole are injected to the guest, and thus the guest is brought into an excited state. In this process, less thermal deactivation occurs and the working rate of the guest is high; thus, highly efficient light emission can be obtained.
Public/Granted literature
- US20120205687A1 LIGHT-EMITTING BODY, LIGHT-EMITTING LAYER, AND LIGHT-EMITTING DEVICE Public/Granted day:2012-08-16
Information query
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