Invention Grant
- Patent Title: Metamaterial structure and manufacturing method of the same
- Patent Title (中): 超材料结构及其制造方法相同
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Application No.: US13431102Application Date: 2012-03-27
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Publication No.: US09203155B2Publication Date: 2015-12-01
- Inventor: Choon Gi Choi , Muhan Choi
- Applicant: Choon Gi Choi , Muhan Choi
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2011-0062508 20110627
- Main IPC: H01Q15/02
- IPC: H01Q15/02 ; B82Y20/00 ; C04B35/00 ; H01Q15/00
Abstract:
Provided are a metamaterial structure and a manufacturing method thereof. The metamaterial structure includes a dielectric layer, nanowires penetrating the dielectric layer and arranged in a spacing having negative refraction with respect to an electromagnetic wave incident on the dielectric layer, and coating layers formed between the nanowires and the dielectric layer.
Public/Granted literature
- US20120326944A1 METAMATERIAL STRUCTURE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2012-12-27
Information query
