Invention Grant
- Patent Title: Asymmetrical multilayer substrate, RF module, and method for manufacturing asymmetrical multilayer substrate
- Patent Title (中): 不对称多层基板,RF模块以及制造不对称多层基板的方法
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Application No.: US13664358Application Date: 2012-10-30
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Publication No.: US09204533B2Publication Date: 2015-12-01
- Inventor: Romero Christian , Seung Wook Park , Young Do Kweon , Mi Jin Park
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2011-0112389 20111031; KR10-2012-0117043 20121022
- Main IPC: H03H7/38
- IPC: H03H7/38 ; H05K3/00 ; H05K1/02 ; H05K1/16 ; H05K3/46

Abstract:
Disclosed herein are an asymmetrical multilayer substrate, an RF module, and a method for manufacturing the asymmetrical multilayer substrate. The asymmetrical multilayer substrate includes a core layer, a first pattern layer formed on one side of the core layer and including a first signal line pattern, a second pattern layer formed on the other side and including a second metal plate and a second routing line pattern, a first insulating layer thinner than the core layer formed on the second pattern layer and including a first via, and a third pattern layer formed on the first insulating layer and including a third signal line pattern, wherein an impedance transformation circuit including an impedance load and a parasitic capacitance load on the transmission line is formed for impedance matching in signal transmission between the signal line patterns formed in the upper and lower side directions of the core layer.
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