Invention Grant
- Patent Title: In—Ga—Zn oxide sputtering target and method for producing same
- Patent Title (中): In-Ga-Zn氧化物溅射靶及其制造方法
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Application No.: US14116299Application Date: 2012-04-27
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Publication No.: US09206502B2Publication Date: 2015-12-08
- Inventor: Misa Sunagawa , Masayuki Itose , Mami Nishimura , Masashi Kasami
- Applicant: Misa Sunagawa , Masayuki Itose , Mami Nishimura , Masashi Kasami
- Applicant Address: JP Tokyo
- Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2011-105720 20110510
- International Application: PCT/JP2012/002917 WO 20120427
- International Announcement: WO2012/153491 WO 20121115
- Main IPC: H01B1/02
- IPC: H01B1/02 ; C23C14/08 ; C04B35/01 ; C04B35/453 ; C04B35/626 ; C04B35/645 ; C23C14/34 ; H01B1/08 ; H01L29/24 ; H01L21/02
Abstract:
A sputtering target including an oxide A and InGaZnO4, the oxide A having a diffraction peak in regions A to K at 2θ=7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5°, 56.5° to 59.5°, 14.8° to 16.2°, 22.3° to 24.3°, 32.2° to 34.2°, 43.1° to 46.1°, 46.2° to 49.2°, and 62.7° to 66.7°.
Public/Granted literature
- US20140145124A1 IN-GA-ZN OXIDE SPUTTERING TARGET AND METHOD FOR PRODUCING SAME Public/Granted day:2014-05-29
Information query
