Invention Grant
US09208870B2 Multi-port memory devices and methods having programmable impedance elements
有权
具有可编程阻抗元件的多端口存储器件和方法
- Patent Title: Multi-port memory devices and methods having programmable impedance elements
- Patent Title (中): 具有可编程阻抗元件的多端口存储器件和方法
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Application No.: US13615493Application Date: 2012-09-13
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Publication No.: US09208870B2Publication Date: 2015-12-08
- Inventor: Ravi Sunkavalli
- Applicant: Ravi Sunkavalli
- Applicant Address: US CA Sunnyvale
- Assignee: Adesto Technologies Corporation
- Current Assignee: Adesto Technologies Corporation
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C8/16 ; G11C7/10
Abstract:
A memory device can include at least two ports for transferring data to and from the memory device; and plurality of memory cells, each memory cell including at least one element programmable between different impedance states, and a plurality of access devices, each access device providing a current path between the element and a different one of the ports.
Public/Granted literature
- US20140071733A1 MULTI-PORT MEMORY DEVICES AND METHODS HAVING PROGRAMMABLE IMPEDANCE ELEMENTS Public/Granted day:2014-03-13
Information query
