Invention Grant
- Patent Title: Method of operating film deposition apparatus and film deposition apparatus
- Patent Title (中): 操作成膜装置和成膜装置的方法
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Application No.: US13932154Application Date: 2013-07-01
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Publication No.: US09209011B2Publication Date: 2015-12-08
- Inventor: Hitoshi Kato , Shigehiro Miura
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2012-152659 20120706
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L21/02 ; C23C16/02 ; C23C16/455 ; H01J37/32
Abstract:
A method of operating a film deposition apparatus including a turntable provided in a vacuum chamber and configured to rotate a substrate mounted thereon, a first reaction gas supplying portion, a second reaction gas supplying portion, a separation area, a first vacuum evacuation port for mainly evacuating the first reaction gas, a second vacuum evacuation port for mainly evacuating the second reaction gas, and a cleaning gas supplying portion for supplying a cleaning gas to clean the turntable, the method includes a cleaning step of supplying the cleaning gas from the cleaning gas supplying portion into the vacuum chamber while terminating the evacuation from the first vacuum evacuation port and performing the evacuation from the second vacuum evacuation port.
Public/Granted literature
- US20140011370A1 METHOD OF OPERATING FILM DEPOSITION APPARATUS AND FILM DEPOSITION APPARATUS Public/Granted day:2014-01-09
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