Invention Grant
US09209039B2 Methods of forming a reversed pattern in a substrate, and related semiconductor device structures
有权
在衬底中形成反转图案的方法以及相关的半导体器件结构
- Patent Title: Methods of forming a reversed pattern in a substrate, and related semiconductor device structures
- Patent Title (中): 在衬底中形成反转图案的方法以及相关的半导体器件结构
-
Application No.: US14312945Application Date: 2014-06-24
-
Publication No.: US09209039B2Publication Date: 2015-12-08
- Inventor: Kaveri Jain , Anton J. deVilliers
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/308
- IPC: H01L21/308 ; G03F7/20
Abstract:
A method of forming a reversed pattern in a substrate. A resist on a substrate is exposed and developed to form a pattern therein, the patterned resist having a first polarity. The polarity of the patterned resist is reversed to a second polarity, and a reversal film is formed over the patterned resist having the second polarity. The patterned resist having the second polarity is removed, forming a pattern in the reversal film. The pattern in the reversal film is then transferred to the substrate. Additional methods of forming a reversed pattern in a substrate are disclosed, as is a semiconductor structure formed during the methods.
Public/Granted literature
- US20140299971A1 METHODS OF FORMING A REVERSED PATTERN IN A SUBSTRATE, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES Public/Granted day:2014-10-09
Information query
IPC分类:
