Invention Grant
- Patent Title: Manufacturing method of a conductive shield layer in semiconductor device
- Patent Title (中): 半导体器件中导电屏蔽层的制造方法
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Application No.: US14482378Application Date: 2014-09-10
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Publication No.: US09209053B2Publication Date: 2015-12-08
- Inventor: Yoshiaki Goto , Takashi Imoto , Takeshi Watanabe , Yuusuke Takano , Yusuke Akada , Yuji Karakane , Yoshinori Okayama , Akihiko Yanagida
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-258705 20131213
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/673 ; H01L23/552 ; H01L23/00
Abstract:
In a manufacturing method of a semiconductor device according to an embodiment, a plurality of semiconductor packages each including a semiconductor chip mounted on a wiring board and a sealing resin layer as objects to be processed, and a tray including a plurality of housing parts are prepared. A depressed portion having a non-penetrating shape or a penetrating shape is formed in the housing part. The semiconductor packages are disposed in the plural housing parts respectively. By sputtering a metal material on the semiconductor package housed in the tray, a conductive shield layer is formed.
Public/Granted literature
- US20150171060A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2015-06-18
Information query
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