A method of forming a semiconductor die comprises covering a first subset of a plurality of dummy gate electrodes and a second subset of the plurality of dummy gate electrodes with a first mask layer, the mask layer being patterned to expose a third subset of the plurality of dummy gate electrodes. The method also comprises removing the third subset of the plurality of dummy gate electrodes to form a first set of openings. The method further comprises filling the first set of openings with a first metal material to form a plurality of P-metal gate areas covering a first area of the major surface within a first device region over the major surface and to form a plurality of dummy P-metal gate areas collectively covering a second area of the major surface within a second device region over the major surface.