Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13893592Application Date: 2013-05-14
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Publication No.: US09209214B2Publication Date: 2015-12-08
- Inventor: Doo-Won Kwon , June-Mo Koo , Yun-Ki Lee , Se-Hoon Jang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Lee & Morse P.C.
- Priority: KR10-2012-0051603 20120515
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L27/144
Abstract:
A semiconductor device includes a substrate including a front side and a back side opposite the front side, first P-type regions located adjacent to the back side and spaced apart from each other in the substrate, N-type regions located under the first P-type regions and spaced apart from each other in the substrate, and second P-type regions located adjacent to the back side and located between the first P-type regions.
Public/Granted literature
- US20130307110A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-11-21
Information query
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