Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13980046Application Date: 2012-03-15
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Publication No.: US09209296B2Publication Date: 2015-12-08
- Inventor: Yoshiaki Toyoda
- Applicant: Yoshiaki Toyoda
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2011-058897 20110317
- International Application: PCT/JP2012/056777 WO 20120315
- International Announcement: WO2012/124786 WO 20120920
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L27/088 ; H01L29/06 ; H01L29/10 ; H01L29/739 ; H01L29/40
Abstract:
A semiconductor device includes a vertical trench gate element portion and a lateral n-channel element portion for control which includes a well diffusion region, and a junction edge termination region which surrounds the vertical trench gate element portion and the lateral n-channel element portion for control. The junction edge termination region includes an oxide layer, a sustain region in contact with a trench provided at the end, and a diffusion region in contact with the sustain region. The diffusion region is deeper than the base region and has low concentration. The sustain region is shallower than the diffusion region and has high concentration. The well diffusion region is deeper than the base region and the sustain region and has low concentration. The breakdown voltage of the junction edge termination region and the well diffusion region is higher than that of the vertical trench gate element portion.
Public/Granted literature
- US20140008718A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-01-09
Information query
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