Invention Grant
- Patent Title: Mechanisms for forming backside illuminated image sensor structure
- Patent Title (中): 形成背面照明图像传感器结构的机制
-
Application No.: US14099481Application Date: 2013-12-06
-
Publication No.: US09209339B2Publication Date: 2015-12-08
- Inventor: Hung-Chang Chang , Chun-Yuan Hsu , Chien-Chung Chen , Yung-Hsieh Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/18 ; H01L31/0232

Abstract:
Embodiments of mechanisms of a backside illuminated image sensor structure are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.
Public/Granted literature
- US20150162365A1 MECHANISMS FOR FORMING BACKSIDE ILLUMINATED IMAGE SENSOR STRUCTURE Public/Granted day:2015-06-11
Information query
IPC分类: