Invention Grant
US09209798B2 Bidirectional bipolar junction transistor operation, circuits, and systems with two base junctions clamped by default
有权
双向结型晶体管的双向晶体管操作,电路和系统,两个基极接点被默认钳位
- Patent Title: Bidirectional bipolar junction transistor operation, circuits, and systems with two base junctions clamped by default
- Patent Title (中): 双向结型晶体管的双向晶体管操作,电路和系统,两个基极接点被默认钳位
-
Application No.: US14714809Application Date: 2015-05-18
-
Publication No.: US09209798B2Publication Date: 2015-12-08
- Inventor: William C. Alexander , Richard A. Blanchard
- Applicant: Ideal Power Inc.
- Applicant Address: US TX Austin
- Assignee: IDEAL POWER INC.
- Current Assignee: IDEAL POWER INC.
- Current Assignee Address: US TX Austin
- Agency: Groover & Associates PLLC
- Agent Robert Groover; Gwendolyn Groover
- Main IPC: H01L29/86
- IPC: H01L29/86 ; H03K17/60 ; H02M3/158 ; H03K17/66 ; H01L29/739 ; H01L29/08 ; H01L29/16 ; H01L29/737 ; H02M1/088 ; H02M7/797 ; H03K3/012 ; H03K17/687 ; H01L29/06 ; H01L29/10 ; H01L29/73 ; H02M11/00 ; H01L29/732

Abstract:
Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
Public/Granted literature
Information query
IPC分类: