Invention Grant
- Patent Title: High freuency semiconductor switch and wireless device
- Patent Title (中): 高频半导体开关和无线设备
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Application No.: US13931522Application Date: 2013-06-28
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Publication No.: US09209800B2Publication Date: 2015-12-08
- Inventor: Yugo Kunishi , Toshiki Seshita
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JPP2013018606 20130201
- Main IPC: H04B1/44
- IPC: H04B1/44 ; H03K17/693 ; H03K17/10 ; H01L27/12 ; H04B1/52
Abstract:
A high frequency semiconductor switch has a first terminal, second terminals, a first through FET group, second through FET groups and a shunt FET group. The first through FET group has first field effect transistors connected serially with each other. One end of the first through FET group is connected to the first terminal. Each of the second through FET groups has second field effect transistors connected serially with each other. One end of each of the second through FET groups is connected to each of the second terminals. The other end of each of the second through FET groups is commonly connected to the other end of the first through FET group. The shunt FET group has third field effect transistors connected serially with each other between the second terminal and a ground terminal.
Public/Granted literature
- US20140220909A1 HIGH FREUENCY SEMICONDUCTOR SWITCH AND WIRELESS DEVICE Public/Granted day:2014-08-07
Information query
