Invention Grant
- Patent Title: Production method of high-density SIM card package
- Patent Title (中): 高密度SIM卡封装的生产方法
-
Application No.: US13883672Application Date: 2010-12-30
-
Publication No.: US09210813B2Publication Date: 2015-12-08
- Inventor: Jianyou Xie , Xiaowei Guo , Wenhai He , Wei Mu , Xin Chen
- Applicant: Jianyou Xie , Xiaowei Guo , Wenhai He , Wei Mu , Xin Chen
- Applicant Address: CN Tianshui
- Assignee: TIANSHUI HUATIAN TECHNOLOGY CO., LTD.
- Current Assignee: TIANSHUI HUATIAN TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Tianshui
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: CN201010564456 20101130
- International Application: PCT/CN2010/080542 WO 20101230
- International Announcement: WO2012/071759 WO 20120607
- Main IPC: H05K3/30
- IPC: H05K3/30 ; H05K1/18 ; H01L23/00 ; H05K3/00 ; H01L23/31 ; H01L23/498 ; H01L25/065

Abstract:
A high-density Subscriber Identity Module (SIM) card package and a production method thereof are provided. The SIM card package includes a substrate, an Integrated Circuit (IC) chip, a bonding wire, and a mold cap. The substrate is a two-layer, a four-layer, a six-layer or an eight-layer high-density interlinked and packaged organic laminated substrate that is manufactured through an etching-back process, and a passive device and a crystal oscillator are provided on the organic laminated substrate. Two IC chips are provided side by side, or one of the IC chips is stacked with a third IC chip, the third IC chip being respectively connected to the organic laminated substrate and the IC chip under the third IC chip by the bonding wire. The IC chip, the passive device, and the crystal oscillator are adhered to the organic laminated substrate.
Public/Granted literature
- US20130223018A1 HIGH-DENSITY SIM CARD PACKAGE AND PRODUCTION METHOD THEREOF Public/Granted day:2013-08-29
Information query