Invention Grant
- Patent Title: Power semiconductor module with asymmetrical lead spacing
- Patent Title (中): 具有不对称引线间距的功率半导体模块
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Application No.: US14667185Application Date: 2015-03-24
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Publication No.: US09210818B2Publication Date: 2015-12-08
- Inventor: Olaf Zschieschang , Andreas Laschek-Enders
- Applicant: IXYS Semiconductor GmbH
- Applicant Address: DE Lampertheim
- Assignee: IXYS Semiconductor GmbH
- Current Assignee: IXYS Semiconductor GmbH
- Current Assignee Address: DE Lampertheim
- Agency: Imperium Patent Works
- Agent Amir V. Adibi
- Main IPC: H05K7/00
- IPC: H05K7/00 ; H05K5/00 ; H01L23/373 ; H01L21/02 ; H05K1/11 ; H05K1/18 ; H05K7/14 ; H01L23/057 ; H01L23/31
Abstract:
A power semiconductor has power terminals arranged in a row at one side of the housing, with control terminals arranged in a row at the other side of the housing. The spacing between adjacent power terminals is greater than the spacing between adjacent control terminals.
Public/Granted literature
- US20150195928A1 Power Semiconductor Module with Asymmetrical Lead Spacing Public/Granted day:2015-07-09
Information query
