Invention Grant
- Patent Title: Power semiconductor module having layered insulating side walls
- Patent Title (中): 功率半导体模块具有分层的绝缘侧壁
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Application No.: US13256275Application Date: 2009-03-13
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Publication No.: US09210826B2Publication Date: 2015-12-08
- Inventor: Markus Billmann , Christoph Bloesch , Dirk Malipaard , Andreas Zenkner
- Applicant: Markus Billmann , Christoph Bloesch , Dirk Malipaard , Andreas Zenkner
- Applicant Address: DE Munich DE Munich
- Assignee: Siemens Aktiengesellschaft,Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V.
- Current Assignee: Siemens Aktiengesellschaft,Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V.
- Current Assignee Address: DE Munich DE Munich
- Agent Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- International Application: PCT/EP2009/002056 WO 20090313
- International Announcement: WO2010/102654 WO 20100916
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H05K7/14 ; H01L25/07 ; H01L23/04 ; H01L23/498 ; H01L23/10
Abstract:
A power semiconductor module includes at least two interconnected power semiconductor units having actuatable power semiconductors, a module housing in which the power semiconductor units are disposed and which has an electrically insulating side wall, and at least one connection bus extended through the side wall and connected to at least one of the power semiconductor units. High explosion resistance and particularly inexpensive production are provided by forming the insulating side wall as a stack of insulating and partial elements constructed as a single piece, in which contact areas of the partial elements contact each other.
Public/Granted literature
- US20120001317A1 POWER SEMICONDUCTOR MODULE HAVING LAYERED INSULATING SIDE WALLS Public/Granted day:2012-01-05
Information query
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