Invention Grant
US09214206B2 Method of testing non-volatile memory device and method of managing non-volatile memory device
有权
测试非易失性存储器件的方法和管理非易失性存储器件的方法
- Patent Title: Method of testing non-volatile memory device and method of managing non-volatile memory device
- Patent Title (中): 测试非易失性存储器件的方法和管理非易失性存储器件的方法
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Application No.: US14468736Application Date: 2014-08-26
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Publication No.: US09214206B2Publication Date: 2015-12-15
- Inventor: Sang-In Park , Boh-Chang Kim , Bu-il Nam , Dong-Ku Kang
- Applicant: Sang-In Park , Boh-Chang Kim , Bu-il Nam , Dong-Ku Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2013-0106305 20130904
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C8/08 ; G11C16/08 ; G11C16/34 ; G11C29/10 ; G11C29/44 ; G11C16/00 ; G11C29/12
Abstract:
A method of testing a non-volatile memory device and a method of managing the non-volatile memory device are provided. The method of testing the non-volatile memory device includes calculating first and second values based on program loop frequencies corresponding to word lines of a memory area. A characteristic value of the memory area may be calculated based on the first and second values, and may be compared to a reference value to determine whether the memory area is defective.
Public/Granted literature
- US20150063030A1 METHOD OF TESTING NON-VOLATILE MEMORY DEVICE AND METHOD OF MANAGING NON-VOLATILE MEMORY DEVICE Public/Granted day:2015-03-05
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