Invention Grant
US09214221B2 Semiconductor device with logic circuit, SRAM circuit and standby state
有权
具有逻辑电路，SRAM电路和待机状态的半导体器件
- Patent Title: Semiconductor device with logic circuit, SRAM circuit and standby state
- Patent Title (中): 具有逻辑电路，SRAM电路和待机状态的半导体器件
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Application No.: US14245124Application Date: 2014-04-04
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Publication No.: US09214221B2Publication Date: 2015-12-15
- Inventor: Masanao Yamaoka , Koichiro Ishibashi , Shigezumi Matsui , Kenichi Osada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JPP2001-324357 20011023
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/412 ; G11C5/14 ; G11C11/417
Abstract:
A semiconductor device is provided. The semiconductor device includes a logic circuit, an SRAM circuit coupled to a power line, and a switch coupled between the logic circuit and the power line. Before the switch is changed to an off position, a part of information held in the logic circuit is transferred to the SRAM circuit.
Public/Granted literature
- US20140219010A1 Semiconductor Device Public/Granted day:2014-08-07
Information query
