Invention Grant
US09214223B2 Resistance memory device and memory apparatus and data processing system
有权
电阻记忆装置及存储装置及数据处理系统
- Patent Title: Resistance memory device and memory apparatus and data processing system
- Patent Title (中): 电阻记忆装置及存储装置及数据处理系统
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Application No.: US13971069Application Date: 2013-08-20
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Publication No.: US09214223B2Publication Date: 2015-12-15
- Inventor: Hyun Mi Hwang , Hyung Dong Lee
- Applicant: SK HYNIX INC.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0148667 20121218
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; H01L45/00 ; H01L41/09 ; G11C23/00
Abstract:
A resistance memory device and a memory apparatus and data processing apparatus having the same are provided. The resistance memory device includes a pair of electrode layers and a variable resistance layer interposed between the pair of electrode layers. The variable resistance layer includes at least one variable resistance material layer and a piezoelectric material layer coupled to the at least one variable resistance material layer.
Public/Granted literature
- US20140169067A1 RESISTANCE MEMORY DEVICE AND MEMORY APPARATUS AND DATA PROCESSING SYSTEM Public/Granted day:2014-06-19
Information query
