A memory element includes a nonvolatile switch to be set to a first low resistance state by applying a voltage higher than a positive threshold voltage and to a second high resistance state by applying another voltage more negative than a negative threshold voltage. The memory element further includes a volatile switch in series with the nonvolatile switch, the nonvolatile switch to be set to a third low resistance state by applying a current higher than a threshold current and to fourth high resistance state by applying a current lower than the threshold current. A method for operating a memory array with memory elements with series volatile and nonvolatile switches is also provided.