Invention Grant
US09214227B2 Nonvolatile memory device performing read operation using reference cell array and semiconductor system using the same
有权
使用参考单元阵列执行读取操作的非易失性存储器件和使用其的半导体系统
- Patent Title: Nonvolatile memory device performing read operation using reference cell array and semiconductor system using the same
- Patent Title (中): 使用参考单元阵列执行读取操作的非易失性存储器件和使用其的半导体系统
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Application No.: US14042833Application Date: 2013-10-01
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Publication No.: US09214227B2Publication Date: 2015-12-15
- Inventor: Kyu Sung Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0090016 20130730
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C11/56
Abstract:
Provided is a nonvolatile memory device including a resistive memory cell and semiconductor system using the same that is capable of setting the reference resistance value using resistance values of a plurality of memory cells. The nonvolatile memory device comprises one or more column lines, two or more row lines, a plurality of memory cells configured to be connected to the column lines and each of the row lines, and a reference resistance setting unit configured to enable a subset or all of the column lines and row lines and to set a reference resistance value.
Public/Granted literature
- US20150036412A1 NONVOLATILE MEMORY DEVICE AND SEMICONDUCTOR SYSTEM USING THE SAME Public/Granted day:2015-02-05
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