Invention Grant
US09214230B2 Resistive random access memory cell structure with reduced programming voltage
有权
具有降低编程电压的电阻式随机存取存储单元结构
- Patent Title: Resistive random access memory cell structure with reduced programming voltage
- Patent Title (中): 具有降低编程电压的电阻式随机存取存储单元结构
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Application No.: US14594940Application Date: 2015-01-12
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Publication No.: US09214230B2Publication Date: 2015-12-15
- Inventor: Pantas Sutardja , Albert Wu , Winston Lee , Peter Lee , Runzi Chang
- Applicant: Marvell World Trade LTD.
- Applicant Address: BB St. Michael
- Assignee: Marvell World Trade LTD.
- Current Assignee: Marvell World Trade LTD.
- Current Assignee Address: BB St. Michael
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L45/00 ; H01L27/24
Abstract:
A cell of a resistive random access memory including (i) a resistive element and (ii) a switch. The resistive element includes (i) a first electrode, and (ii) a second electrode. The switch includes (i) a first terminal connected to a first contact, and (i) a second terminal connected to a second contact. The second contact is connected to the second electrode of the resistive element via a third contact. The third contact has a shape including a first surface and a second surface that is opposite to the first surface. The shape of the third contact tapers inward from the first surface towards the second surface.
Public/Granted literature
- US20150124520A1 RESISTIVE RANDOM ACCESS MEMORY CELL STRUCTURE WITH REDUCED PROGRAMMING VOLTAGE Public/Granted day:2015-05-07
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