Invention Grant
US09214239B2 Semiconductor memory device, memory system including the same and operating method thereof
有权
半导体存储器件，包括其的存储器系统及其操作方法
- Patent Title: Semiconductor memory device, memory system including the same and operating method thereof
- Patent Title (中): 半导体存储器件，包括其的存储器系统及其操作方法
-
Application No.: US14219838Application Date: 2014-03-19
-
Publication No.: US09214239B2Publication Date: 2015-12-15
- Inventor: Sung Hyun Jung
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0127772 20131025
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C16/10
Abstract:
A semiconductor memory device includes a memory cell array including a plurality of memory cells, a peripheral circuit suitable for generating program and erase voltages and applying the program and erase voltages to the plurality of memory cells when program and erase operations are performed on the plurality of memory cells, and a control logic suitable for controlling the peripheral circuit unit during the program and erase operations and counting a pulse number of the program and erase voltages to store a resultant count number as status data.
Public/Granted literature
- US20150117129A1 SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND OPERATING METHOD THEREOF Public/Granted day:2015-04-30
Information query
