Invention Grant
US09214280B2 Very thin dielectrics for high permittivity and very low leakage capacitors and energy storing devices
有权
用于高电容率的非常薄的电介质和非常低的漏电电容器和能量存储装置
- Patent Title: Very thin dielectrics for high permittivity and very low leakage capacitors and energy storing devices
- Patent Title (中): 用于高电容率的非常薄的电介质和非常低的漏电电容器和能量存储装置
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Application No.: US14490873Application Date: 2014-09-19
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Publication No.: US09214280B2Publication Date: 2015-12-15
- Inventor: David R. Carver , Robert G. Carver
- Applicant: Carver Scientific, Inc.
- Applicant Address: US LA Baton Rouge
- Assignee: Carver Scientific, Inc.
- Current Assignee: Carver Scientific, Inc.
- Current Assignee Address: US LA Baton Rouge
- Agency: Klarquist Sparkman, LLP
- Main IPC: H01G4/14
- IPC: H01G4/14 ; H01G13/00 ; H01G4/20 ; H01G4/06
Abstract:
Methods are disclosed for creating extremely high permittivity dielectric materials for use in capacitors and energy storage devices. High permittivity materials suspended in an organic non-conductive media matrix with enhanced properties and methods for making the same are disclosed. Organic polymers, shellac, silicone oil, and/or zein formulations are utilized to produce thin film low conductivity dielectric coatings. Transition metal salts as salt or oxide matrices are formed at low temperatures utilizing mild reducing agents.
Public/Granted literature
- US20150000090A1 VERY THIN DIELECTRICS FOR HIGH PERMITTIVITY AND VERY LOW LEAKAGE CAPACITORS AND ENERGY STORING DEVICES Public/Granted day:2015-01-01
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